Title :
Depletion mode Al2O3/GaAs MOSFETs with high current density
Author :
Parikh, Primit ; Chavarkar, Prashant ; Keller, Bernd ; Mishra, Umesh
Author_Institution :
California Univ., Santa Barbara, CA, USA
Abstract :
The growing field of wireless communication has necessitated the need for ultra low power, high speed transistor technology. Low gate leakage in FETs is required for several applications, most notably low power high-speed ICs and high reliability power amplifiers. Furthermore, enhancement-mode FETs with low gate-leakage necessary for dense low power ICs are currently extremely difficult to achieve. An insulator gate would be a natural choice for high speed GaAs FETs with minimal gate leakage. To this end we are pursuing the development of GaAs MOSFET technology with Al2O3 obtained by the wet oxidation of AlxGa1-xAs in steam as the gate insulator
Keywords :
III-V semiconductors; MOSFET; UHF field effect transistors; alumina; current density; gallium arsenide; Al2O3-GaAs; AlxGa1-xAs gate insulator; GaAs MOSFET technology; depletion mode MOSFETs; high current density; high speed transistor technology; minimal gate leakage; ultra low power transistor technology; wet oxidation; Aluminum compounds;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1997. Proceedings., 1997 IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-3970-3
DOI :
10.1109/CORNEL.1997.649380
