Depletion mode Al2O3/GaAs MOSFETs with high current density

The growing field of wireless communication has necessitated the need for ultra low power, high speed transistor technology. Low gate leakage in FETs is required for several applications, most notably low power high-speed ICs and high reliability power amplifiers. Furthermore, enhancement-mode FETs with low gate-leakage necessary for dense low power ICs are currently extremely difficult to achieve. An insulator gate would be a natural choice for high speed GaAs FETs with minimal gate leakage. To this end we are pursuing the development of GaAs MOSFET technology with Al₂O₃ obtained by the wet oxidation of Al_xGa_1-xAs in steam as the gate insulator