RF performance of a 77 GHz monolithic CPW amplifier with flip-chip interconnections

Author

Maruhashi, K. ; Ito, M. ; Kusamitsu, H. ; Morishita, Y. ; Ohata, K.

Author_Institution

Kansai Electron. Res. Labs., NEC Corp, Shiga, Japan

Volume

2

fYear

1998

fDate

7-12 June 1998

Firstpage

1095

Abstract

This paper describes the RF performance of a 77 GHz coplanar waveguide (CPW) monolithic three-stage amplifier connected to an alumina substrate using flip-chip technology. Key issues discussed here cover the substrate, MMIC and bonding structures to realize a good amplifier operation at this frequency. The flip-chip mounted GaAs monolithic amplifier exhibited a gain higher than 15 dB at around 77 GHz.

Keywords

III-V semiconductors; MMIC amplifiers; coplanar waveguides; field effect MIMIC; flip-chip devices; gallium arsenide; integrated circuit interconnections; integrated circuit packaging; microassembling; millimetre wave amplifiers; 15 dB; 77 GHz; Al/sub 2/O/sub 3/; EHF; GaAs; GaAs monolithic amplifier; RF performance; alumina substrate; bonding structures; coplanar waveguide; flip-chip interconnections; monolithic CPW amplifier; three-stage amplifier; Bonding; Coplanar waveguides; Gallium arsenide; Integrated circuit interconnections; Laboratories; MMICs; Millimeter wave technology; National electric code; Radio frequency; Radiofrequency amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1998 IEEE MTT-S International

Conference_Location

Baltimore, MD, USA

ISSN

0149-645X

Print_ISBN

0-7803-4471-5

Type

conf

DOI

10.1109/MWSYM.1998.705184

Filename

705184