Title :
K-band 0.25 μm GaN HEMT
Author :
Gulyaev, V.I. ; Myakishev, Yu.B. ; Rakov, Yu.N. ; Dobush, I.M. ; Kokolov, A.A. ; Babak, L.I.
Author_Institution :
JSC Oktava, Novosibirsk, Russia
Abstract :
DC and RF performances of 0.25 μm GaN HEMT on sapphire with T-shaped gate (Wg = 8×50 μm) based on the AlGaN/AlN/GaN heterostructure are presented. The measured figures of merit are fT = 31 GHz and fmax = 60 GHz. A transistor´s small signal equivalent circuit is extracted.
Keywords :
III-V semiconductors; aluminium compounds; equivalent circuits; gallium compounds; high electron mobility transistors; millimetre wave field effect transistors; sapphire; wide band gap semiconductors; AlGaN-AlN-GaN; K-band HEMT; T-shaped gate; figure of merit; frequency 31 GHz; frequency 60 GHz; heterostructure; sapphire; size 0.25 mum; transistor small signal equivalent circuit; Aluminum gallium nitride; Electronic mail; Equivalent circuits; Gallium arsenide; Gallium nitride; HEMTs; Silicon;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-1-4673-1199-1
