DocumentCode
1887444
Title
K-band 0.25 μm GaN HEMT
Author
Gulyaev, V.I. ; Myakishev, Yu.B. ; Rakov, Yu.N. ; Dobush, I.M. ; Kokolov, A.A. ; Babak, L.I.
Author_Institution
JSC Oktava, Novosibirsk, Russia
fYear
2012
fDate
10-14 Sept. 2012
Firstpage
66
Lastpage
67
Abstract
DC and RF performances of 0.25 μm GaN HEMT on sapphire with T-shaped gate (Wg = 8×50 μm) based on the AlGaN/AlN/GaN heterostructure are presented. The measured figures of merit are fT = 31 GHz and fmax = 60 GHz. A transistor´s small signal equivalent circuit is extracted.
Keywords
III-V semiconductors; aluminium compounds; equivalent circuits; gallium compounds; high electron mobility transistors; millimetre wave field effect transistors; sapphire; wide band gap semiconductors; AlGaN-AlN-GaN; K-band HEMT; T-shaped gate; figure of merit; frequency 31 GHz; frequency 60 GHz; heterostructure; sapphire; size 0.25 mum; transistor small signal equivalent circuit; Aluminum gallium nitride; Electronic mail; Equivalent circuits; Gallium arsenide; Gallium nitride; HEMTs; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
Conference_Location
Sevastopol, Crimea
Print_ISBN
978-1-4673-1199-1
Type
conf
Filename
6335844
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