Title :
Description of a GaN transistor quasimonolitic integrated circuit of the 4–18 GHz distilated amplifier
Author :
Gulyaev, V.I. ; Volkhin, A.I. ; Myakishev, Yu.B.
Author_Institution :
JSC Oktava, Novosibirsk, Russia
Abstract :
A description is given of the results obtained from developing the GaN quasi-monolithic IC (QMIC) for the 4-18 GHz distributed amplifier built upon the AlGaN/AlN/GaN heterostructures grown upon sapphire substrates. Design features and frequency responses are presented.
Keywords :
III-V semiconductors; MMIC amplifiers; aluminium compounds; frequency response; gallium compounds; high electron mobility transistors; microwave integrated circuits; wide band gap semiconductors; AlGaN-AlN-GaN; HEMT; QMIC; distilated amplifier; frequency 4 GHz to 18 GHz; frequency response; quasi-monolithic IC; sapphire substrates; transistor quasimonolithic integrated circuit; Aluminum gallium nitride; Distributed amplifiers; Electronic mail; Gallium arsenide; Gallium nitride; HEMTs; Integrated circuits;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-1-4673-1199-1
