A mathematic estimation of the application possibility at THz region for cylindrical VME device

Author

Liu, G.Y. ; Xia, S.H. ; Chen, B.X. ; Li, H.Y.

Author_Institution

IECAS, Beijing, China

fYear

2015

fDate

13-17 July 2015

Firstpage

46

Lastpage

47

Abstract

On the basis of summation of previous electron transit time relations for the cylindrical microelectronics device, calculated mathematically the typical value of the electron transit time at the Terahertz region for cylindrical vacuum microelectronics diode, by using of the method of an equivalent diode, approximately calculated a typical value of the electron transit time at the Terahertz region for cylindrical vacuum microelectronics triode too. The application possibility for the cylindrical vacuum microelectronics device at the Terahertz region has been estimated from the point of electron transit time.

Keywords

mathematical analysis; terahertz wave devices; vacuum microelectronics; THz region; Terahertz region; cylindrical VME device; cylindrical microelectronics device; cylindrical vacuum microelectronics diode; cylindrical vacuum microelectronics triode; electron transit time; equivalent diode; Anodes; cylindrical vacuum microelectronics device (C-VMD); electron transit time t; terahertz (THz) region;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference (IVNC), 2015 28th International

Conference_Location

Guangzhou

Print_ISBN

978-1-4673-9356-0

Type

conf

DOI

10.1109/IVNC.2015.7225525

Filename

7225525