Title :
A mathematic estimation of the application possibility at THz region for cylindrical VME device
Author :
Liu, G.Y. ; Xia, S.H. ; Chen, B.X. ; Li, H.Y.
Author_Institution :
IECAS, Beijing, China
Abstract :
On the basis of summation of previous electron transit time relations for the cylindrical microelectronics device, calculated mathematically the typical value of the electron transit time at the Terahertz region for cylindrical vacuum microelectronics diode, by using of the method of an equivalent diode, approximately calculated a typical value of the electron transit time at the Terahertz region for cylindrical vacuum microelectronics triode too. The application possibility for the cylindrical vacuum microelectronics device at the Terahertz region has been estimated from the point of electron transit time.
Keywords :
mathematical analysis; terahertz wave devices; vacuum microelectronics; THz region; Terahertz region; cylindrical VME device; cylindrical microelectronics device; cylindrical vacuum microelectronics diode; cylindrical vacuum microelectronics triode; electron transit time; equivalent diode; Anodes; cylindrical vacuum microelectronics device (C-VMD); electron transit time t; terahertz (THz) region;
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2015 28th International
Conference_Location :
Guangzhou
Print_ISBN :
978-1-4673-9356-0
DOI :
10.1109/IVNC.2015.7225525
