Title :
15 W output power amplifier with 8.5–12.5 GHz frequency band on the base of GaN QMIC´s
Author :
Gulyaev, V.I. ; Glazunov, V.V. ; Zykova, G.S. ; Myakishev, Yu.B. ; Monchares, N.V.
Author_Institution :
JSC Oktava, Novosibirsk, Russia
Abstract :
This paper presents the design and measured characteristics of QMIC and module, as well as the results of development of the output GaN quasi-monolithic IC (QMIC) and the open-frame hybrid-integrated amplifier module on its base with the output power of 15 W in 8.5-12.5 GHz frequency band.
Keywords :
III-V semiconductors; MMIC; gallium compounds; power amplifiers; wide band gap semiconductors; GaN; QMIC; frequency 8.5 GHz to 12.5 GHz; open frame hybrid-integrated amplifier module; power 15 W; power amplifier; quasimonolithic IC; Aluminum gallium nitride; Electronic mail; Gallium nitride; HEMTs; Integrated circuits; Power amplifiers; Power generation;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-1-4673-1199-1
