• DocumentCode
    1887510
  • Title

    15 W output power amplifier with 8.5–12.5 GHz frequency band on the base of GaN QMIC´s

  • Author

    Gulyaev, V.I. ; Glazunov, V.V. ; Zykova, G.S. ; Myakishev, Yu.B. ; Monchares, N.V.

  • Author_Institution
    JSC Oktava, Novosibirsk, Russia
  • fYear
    2012
  • fDate
    10-14 Sept. 2012
  • Firstpage
    72
  • Lastpage
    73
  • Abstract
    This paper presents the design and measured characteristics of QMIC and module, as well as the results of development of the output GaN quasi-monolithic IC (QMIC) and the open-frame hybrid-integrated amplifier module on its base with the output power of 15 W in 8.5-12.5 GHz frequency band.
  • Keywords
    III-V semiconductors; MMIC; gallium compounds; power amplifiers; wide band gap semiconductors; GaN; QMIC; frequency 8.5 GHz to 12.5 GHz; open frame hybrid-integrated amplifier module; power 15 W; power amplifier; quasimonolithic IC; Aluminum gallium nitride; Electronic mail; Gallium nitride; HEMTs; Integrated circuits; Power amplifiers; Power generation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
  • Conference_Location
    Sevastopol, Crimea
  • Print_ISBN
    978-1-4673-1199-1
  • Type

    conf

  • Filename
    6335847