Title :
Passive MIC for power aplifier based on discrete GaN-transistors
Author :
Yushchenko, A.Y. ; Ayzenshtat, G.I. ; Monastyrev, E.A. ; Bozhkov, V.G. ; Ivashenko, A.I.
Author_Institution :
Res. Inst. of Semicond. Devices, Tomsk, Russia
Abstract :
Presented in this paper are the results of creation of summing/correction/matching circuits for microwave power amplifiers, performed as GaAs-based monolithic ICs.
Keywords :
III-V semiconductors; MMIC amplifiers; gallium arsenide; gallium compounds; power amplifiers; summing circuits; wide band gap semiconductors; GaAs; GaN; correction circuits; discrete transistors; matching circuits; microwave power amplifier; monolithic integrated circuit; passive MIC; power aplifier; summing circuits; Electronic mail; Gallium arsenide; Gallium nitride; High power amplifiers; Microwave integrated circuits; PIN photodiodes; Summing circuits;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-1-4673-1199-1
