• DocumentCode
    1887533
  • Title

    Passive MIC for power aplifier based on discrete GaN-transistors

  • Author

    Yushchenko, A.Y. ; Ayzenshtat, G.I. ; Monastyrev, E.A. ; Bozhkov, V.G. ; Ivashenko, A.I.

  • Author_Institution
    Res. Inst. of Semicond. Devices, Tomsk, Russia
  • fYear
    2012
  • fDate
    10-14 Sept. 2012
  • Firstpage
    74
  • Lastpage
    75
  • Abstract
    Presented in this paper are the results of creation of summing/correction/matching circuits for microwave power amplifiers, performed as GaAs-based monolithic ICs.
  • Keywords
    III-V semiconductors; MMIC amplifiers; gallium arsenide; gallium compounds; power amplifiers; summing circuits; wide band gap semiconductors; GaAs; GaN; correction circuits; discrete transistors; matching circuits; microwave power amplifier; monolithic integrated circuit; passive MIC; power aplifier; summing circuits; Electronic mail; Gallium arsenide; Gallium nitride; High power amplifiers; Microwave integrated circuits; PIN photodiodes; Summing circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
  • Conference_Location
    Sevastopol, Crimea
  • Print_ISBN
    978-1-4673-1199-1
  • Type

    conf

  • Filename
    6335848
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1887533