A new quantum well intermixing technique using inductively-coupled Argon plasma on InGaAs/InGaAsP laser structures

Author

Leong, D. ; Djie, H.S. ; Dowd, P.

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore

fYear

2002

fDate

2002

Firstpage

319

Lastpage

322

Abstract

A new quantum-well intermixing technique is demonstrated on InGaAs/InGaAsP quantum well laser structures using Argon plasma, generated by an Inductively Coupled Plasma (ICP) etcher. The parameters of the process were optimised using Taguchi´s method. Using RF power of 480 W and low ICP power of 500 W, a blue shift of 104 nm was obtained after exposure to the plasma for 5 minutes

Keywords

III-V semiconductors; Taguchi methods; annealing; argon; gallium arsenide; gallium compounds; indium compounds; photoluminescence; point defects; quantum well lasers; sputter etching; 480 W; 5 min; 500 W; Ar; Ar plasma; ICP etcher; InGaAs-InGaAsP; InGaAs/InGaAsP QW laser structures; PL spectra; Taguchi´s method; annealing; blue shift; inductively coupled plasma etcher; photoluminescence measurements; point defects; process parameters optimisation; quantum-well intermixing technique; semiconductor laser; Argon; Etching; Indium gallium arsenide; Optical coupling; Photonic band gap; Plasma applications; Plasma devices; Plasma waves; Quantum well lasers; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

Conference_Location

Stockholm

ISSN

1092-8669

Print_ISBN

0-7803-7320-0

Type

conf

DOI

10.1109/ICIPRM.2002.1014394

Filename

1014394