Title :
A new quantum well intermixing technique using inductively-coupled Argon plasma on InGaAs/InGaAsP laser structures
Author :
Leong, D. ; Djie, H.S. ; Dowd, P.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
Abstract :
A new quantum-well intermixing technique is demonstrated on InGaAs/InGaAsP quantum well laser structures using Argon plasma, generated by an Inductively Coupled Plasma (ICP) etcher. The parameters of the process were optimised using Taguchi´s method. Using RF power of 480 W and low ICP power of 500 W, a blue shift of 104 nm was obtained after exposure to the plasma for 5 minutes
Keywords :
III-V semiconductors; Taguchi methods; annealing; argon; gallium arsenide; gallium compounds; indium compounds; photoluminescence; point defects; quantum well lasers; sputter etching; 480 W; 5 min; 500 W; Ar; Ar plasma; ICP etcher; InGaAs-InGaAsP; InGaAs/InGaAsP QW laser structures; PL spectra; Taguchi´s method; annealing; blue shift; inductively coupled plasma etcher; photoluminescence measurements; point defects; process parameters optimisation; quantum-well intermixing technique; semiconductor laser; Argon; Etching; Indium gallium arsenide; Optical coupling; Photonic band gap; Plasma applications; Plasma devices; Plasma waves; Quantum well lasers; Radio frequency;
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
Conference_Location :
Stockholm
Print_ISBN :
0-7803-7320-0
DOI :
10.1109/ICIPRM.2002.1014394
