Title :
Influence of sink-source channel´s width on Ft and Fmax limit frequencies of AlGaN/GaN HEMT
Author :
Torkhov, N.A. ; Bozhkov, V.G.
Author_Institution :
Sci.-Res. Inst. of Semicond., Tomsk, Russia
Abstract :
It is shown that increasing of full width W of the sink-source channel in Al30Ga70N/GaN HEMT at the expense of the increase of n (a number of sections) results to decreasing of Gmax(F) and H21(F). Therefore, amplifying limit frequencies of current Ft and power Fmax also decrease. Ft and Fmax decrease at the increasing of n is related with increasing parasitic parameters of Al30Ga70N/GaN HEMT.
Keywords :
aluminium compounds; gallium compounds; high electron mobility transistors; Al30Ga70N-GaN; AlGaN/GaN HEMT; limit frequencies; parasitic parameters; sink-source channel; Aluminum gallium nitride; Electronic mail; Equivalent circuits; Gallium nitride; HEMTs; Integrated circuit modeling;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-1-4673-1199-1
