Author :
Wakabayashi, H. ; Yamaguchi, Kazuhiro ; Okano, Makoto ; Kuramochi, Satoru ; Kumagai, Osamu ; Sakane, S. ; Ito, Minora ; Hatano, M. ; Kikuchi, Masashi ; Yamagata, Yoshiki ; Shikanai, T. ; Koseki, K. ; Mabuchi, K. ; Maruyama, Y. ; Akiyama, Kazunari ; Miyata
Abstract :
A 1/2.3-inch 10.3Mpixel 50 frame/s CMOS image sensor fabricated using a 0.13 ¿m 1P4M CMOS process with back-illumination technology achieves sensitivity of 9890e/luxs, random noise of 1.7e and saturation of 8850e. The sensor integrates a 10b/12b analog-to-digital converter, an internal PLL and a 10b serial LVDS interface to enable a data-rate up to 576 MHz.
Keywords :
CMOS image sensors; analogue-digital conversion; digital phase locked loops; 10b serial LVDS interface; 1P4M CMOS process; CMOS image sensor; analog-to-digital converter; back-illumination technology; frequency 576 MHz; internal PLL; random noise; size 0.13 mum; Bismuth; CMOS image sensors; Capacitance; Crosstalk; Delay; Electrodes; Image sensors; Optical amplifiers; Phase locked loops; Signal generators;
