Title :
Doherty amplifier using GaN MESFET NPTB00025
Author :
Prylypska, G.S. ; Makarov, D.G. ; Krizhanovski, V.G.
Author_Institution :
Donetsk Nat. Univ., Donetsk, Ukraine
Abstract :
1 GHz microwave Doherty power amplifier (PA) using GaN MESFET NPTB00025 was designed. Influence of input power dividing ratio and negative gate bias voltages ratio of two class-B PAs on whole Doherty scheme characteristics was simulated. An amplifier delivers 25 W of output power with 69.8% efficiency and 20 V of supply voltage.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; UHF field effect transistors; UHF power amplifiers; gallium compounds; microwave field effect transistors; microwave power amplifiers; wide band gap semiconductors; Doherty scheme characteristics; GaN; MESFET NPTB00025; class-B PA; efficiency 69.8 percent; frequency 1 GHz; input power dividing ratio; microwave Doherty power amplifier; negative gate bias voltage ratio; power 25 W; voltage 20 V; Gallium nitride; Logic gates; Microwave amplifiers; Microwave communication; Microwave transistors; Power amplifiers; Power generation;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-1-4673-1199-1
