2.0–6.0 GHz GaAs MMIC amplifier

Author

Bezus, S.V. ; Tolstolutsky, S.I. ; Tolstolutskaya, A.V.

Author_Institution

Res. Inst. of Radiocommun., Rostov-on-Don, Russia

fYear

2012

fDate

10-14 Sept. 2012

Firstpage

87

Lastpage

88

Abstract

The paper presents the results of designing microwave monolithic integrated circuit of two-stage amplifier produced on pHEMT substrate with chip size 2.4×1.6 mm² and providing 16.5 dB conversion gain and 15 dBm P1dB on 2.0-6.0 GHz. The method of MMIC multistage amplifier designing is developed. FET topology has been optimized for minimization of parasitic parameters and maximization of dynamic range. GaAs pHEMT MMIC two-stage amplifiers are developed and manufactured by using MESFET with 0.7 μm gate´s length as an active element. Characteristics of the device are investigated experimentally in 2.0-6.0 GHz frequency range. Results of measurements are agreed with calculation data and confirm effectiveness of the developed method of designing.

Keywords

III-V semiconductors; MMIC amplifiers; Schottky gate field effect transistors; UHF amplifiers; gallium arsenide; high electron mobility transistors; microwave field effect transistors; minimisation; FET topology; GaAs; MESFET; MMIC multistage amplifier; frequency 2.0 GHz to 6.0 GHz; gain 16.5 dB; gate´s length; microwave monolithic integrated circuit; pHEMT MMIC two-stage amplifier; pHEMT substrate; parasitic parameter minimization; size 0.7 mum; Gallium arsenide; MMICs; Microwave FET integrated circuits; Microwave amplifiers; Microwave circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference

Conference_Location

Sevastopol, Crimea

Print_ISBN

978-1-4673-1199-1

Type

conf

Filename

6335853