Correlation of the leakage current and charge pumping in SIMOX gated diodes

Author

Seghir, H. ; Cristoloveanu, S. ; Jerisian, R. ; Oualid, J. ; Auberton, A.

Author_Institution

LPCS, Grenoble, France

fYear

1991

fDate

1-3 Oct 1991

Firstpage

22

Lastpage

23

Abstract

Gated diodes are very appropriate devices for film and interface characterization in fully depleted SOI (silicon-on-insulator) structures as both leakage current and charge pumping measurements can be performed. The author clarify the merits of each technique, discuss the complementary and overlapping aspects, and correlate the data. Attention is given to P⁺PN⁺ diodes fabricated on SIMOX (separation by implanted oxygen) wafers implanted with 100 mA beam, 200 keV energy, and 1.8×10¹⁸ O/cm² dose, and annealed at 1300°C in argon. The Si film was 150-nm thick

Keywords

ion implantation; leakage currents; semiconductor diodes; semiconductor-insulator boundaries; 100 mA; 1300 degC; 200 keV; Ar annealing; P⁺PN⁺ diodes; SIMOX gated diodes; SOI structures; Si-SiO₂; Si:O⁺; charge pumping; fully depleted structures; interface characterization; leakage current; Annealing; Argon; Charge measurement; Charge pumps; Current measurement; Diodes; Leakage current; Performance evaluation; Semiconductor films; Silicon on insulator technology;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1991. Proceedings, 1991., IEEE International

Conference_Location

Vail Valley, CO

Print_ISBN

0-7803-0184-6

Type

conf

DOI

10.1109/SOI.1991.162837

Filename

162837