Title :
In-situ etching of InP and related P materials in MOVPE chamber using PCl3
Author :
Ougazzaden, A. ; Peticolas, L. ; Rader, Mike ; Chu, S.N.G.
Author_Institution :
Agere Syst., Breinigsville, PA, USA
Abstract :
In this work, we investigate in-situ etching of InP, InGaAsP and InGaAlAs inside a MOVPE chamber for various etching conditions. Phosphorus Trichloride (PCl3) has been used in gaseous form for etching. Precise control of the vertical and lateral etching as a function of the etch conditions has been achieved. With SiO2 stripes, mesa shapes with smooth non re-entrant sidewall 111 planes were formed in a large range of etch temperatures and pressures. Deep selective area mesa etching (4 micron) followed by regrowth having excellent surface morphology and perfect planarity were obtained.
Keywords :
III-V semiconductors; aluminium compounds; etching; gallium arsenide; gallium compounds; indium compounds; semiconductor technology; 4 micron; InGaAlAs; InGaAsP; InP; MOVPE chamber; PCl3; SiO2; SiO2 stripes; deep selective area mesa etching; etch pressures; etch temperatures; etching conditions; in-situ etching; integrated optoelectronic devices; lateral etching; mesa shapes; planarity; precise control; smooth nonre-entrant sidewall 111 planes; surface morphology; vertical etching; Contamination; Crystallography; Epitaxial growth; Epitaxial layers; Etching; Indium phosphide; Optical device fabrication; Shape; Surface morphology; Temperature distribution;
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
Print_ISBN :
0-7803-7320-0
DOI :
10.1109/ICIPRM.2002.1014400
