Title :
The features of temperature dependence pc(T) in ohmic contacts to n-GaN (n-AlN) with high dislocation density
Author :
Sachenko, A.V. ; Belyaev, A.E. ; Boltovets, N.S. ; Zhilyaev, Y.V. ; Konakova, R.V. ; Kudryk, Y.Y. ; Panteleev, V.N. ; Sheremet, V.N.
Author_Institution :
V. Lashkaryov Inst. of Semicond. Phys., Kiev, Ukraine
Abstract :
We studied temperature dependences of resistivity ρc(T) of Pd-Ti-Pd-Au ohmic contacts to wide-gap semiconductors n-GaN and n-AlN with high dislocation density. The obtained dependences cannot be explained by the existing mechanisms of current flow. We propose possible mechanisms explaining the experimental ρc(T) curves for ohmic contacts to n-GaN and n-Al N.
Keywords :
III-V semiconductors; aluminium compounds; dislocation density; gallium compounds; ohmic contacts; wide band gap semiconductors; AlN; GaN; dislocation density; ohmic contacts; temperature dependences; wide-gap semiconductors; Aluminum oxide; Conductivity; Ohmic contacts; Silicon carbide; Temperature dependence; Temperature measurement;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-1-4673-1199-1
