• DocumentCode
    1887778
  • Title

    The features of temperature dependence pc(T) in ohmic contacts to n-GaN (n-AlN) with high dislocation density

  • Author

    Sachenko, A.V. ; Belyaev, A.E. ; Boltovets, N.S. ; Zhilyaev, Y.V. ; Konakova, R.V. ; Kudryk, Y.Y. ; Panteleev, V.N. ; Sheremet, V.N.

  • Author_Institution
    V. Lashkaryov Inst. of Semicond. Phys., Kiev, Ukraine
  • fYear
    2012
  • fDate
    10-14 Sept. 2012
  • Firstpage
    97
  • Lastpage
    98
  • Abstract
    We studied temperature dependences of resistivity ρc(T) of Pd-Ti-Pd-Au ohmic contacts to wide-gap semiconductors n-GaN and n-AlN with high dislocation density. The obtained dependences cannot be explained by the existing mechanisms of current flow. We propose possible mechanisms explaining the experimental ρc(T) curves for ohmic contacts to n-GaN and n-Al N.
  • Keywords
    III-V semiconductors; aluminium compounds; dislocation density; gallium compounds; ohmic contacts; wide band gap semiconductors; AlN; GaN; dislocation density; ohmic contacts; temperature dependences; wide-gap semiconductors; Aluminum oxide; Conductivity; Ohmic contacts; Silicon carbide; Temperature dependence; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
  • Conference_Location
    Sevastopol, Crimea
  • Print_ISBN
    978-1-4673-1199-1
  • Type

    conf

  • Filename
    6335858
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1887778