• DocumentCode
    1887810
  • Title

    Negative resistance of rectifying metal-semiconductor junction

  • Author

    Torkhov, N.A.

  • Author_Institution
    Sci.-Res. Inst. of Semicond., Tomsk, Russia
  • fYear
    2012
  • fDate
    10-14 Sept. 2012
  • Firstpage
    99
  • Lastpage
    100
  • Abstract
    It was shown that in the region of direct current with Uf>;qφb there is the negative resistance part at static VAC of rectifying metal-semiconductor junctions. Theoretical calculation reveals that negative resistance on the direct brunch of VAC is caused by potential step in order to transfer ballistic electrons through a thin base (~0.1 um) of the diode. Analysis of transferring time τT(E) and reflecting time τR(E) makes it possible to calculate estimating frequency band <; 1 THz.
  • Keywords
    semiconductor junctions; submillimetre wave diodes; ballistic electrons; diode; negative resistance; rectifying metal-semiconductor junction; reflecting time analysis; static VAC; transferring time analysis; Electric potential; Electronic mail; Frequency estimation; Gallium arsenide; Junctions; Resistance; Semiconductor diodes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
  • Conference_Location
    Sevastopol, Crimea
  • Print_ISBN
    978-1-4673-1199-1
  • Type

    conf

  • Filename
    6335859
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1887810