One-pot thermal evaporation synthesis of CdS-RGO hetrostructure and its field emission study

Author

Bansode, Sanjeewani R. ; Khare, Ruchita T. ; More, Mahendra A. ; Late, D.J.

Author_Institution

Dept. of Phys., Univ. of Pune, Pune, India

fYear

2015

fDate

13-17 July 2015

Firstpage

82

Lastpage

83

Abstract

CdS-RGO heterostructure was synthesized by thermal evaporation method. The as-synthesized CdS-RGO heterostructure was characterized using X-ray Diffraction, SEM, and EADX, before field emission (FE) studies. The FE characteristics of a planar emitter made up of as-synthesized CdS-RGO heterostructures were measured at the base pressure 1×10^-8 mbar. The synthesized CdS-RGO heterostructure emitter is found to deliver a current density ~70 μA/cm² at an applied electric field of ~ 4.7 V/μm. Moreover, the nanocomposite shows excellent emission stability without significant current degradation making CdS-RGO heterostructure as a promising electron source for practical applications in various vacuum nano-microelectronic devices.

Keywords

II-VI semiconductors; X-ray chemical analysis; X-ray diffraction; cadmium compounds; crystal growth from vapour; current density; field emission; graphene; wide band gap semiconductors; CdS-CO; EADX; SEM; X-ray diffraction; current density; electric field; field emission; heterostructure emitter; one-pot thermal evaporation method; Current density; Furnaces; Graphene; Iron; Nanoelectronics; Thermal stability; X-ray scattering; CdS; Field Emission; RGO;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference (IVNC), 2015 28th International

Conference_Location

Guangzhou

Print_ISBN

978-1-4673-9356-0

Type

conf

DOI

10.1109/IVNC.2015.7225540

Filename

7225540