Selective area growth of InP on InP precoated silicon substrate by hydride vapor phase epitaxy

Author

Sun, Y.T. ; Napierala, J. ; Lourdudoss, S.

Author_Institution

Dept. of Microelectron. & Inf. Technol., R. Inst. of Technol., Kista, Sweden

fYear

2002

fDate

2002

Firstpage

339

Lastpage

342

Abstract

Selective area growth of InP is carried out on an InP precoated [001] 2° off Si substrate in a low pressure hydride vapor phase epitaxy system under different gas phase supersaturation. Epitaxial lateral overgrowth can be formed on a Si₃N₄ mask under certain growth conditions, which has improved crystallographic quality of the InP seed layer. A crystallographic model is proposed to demonstrate the observed asymmetric growth profile of selective area growth.

Keywords

III-V semiconductors; crystallography; indium compounds; semiconductor growth; silicon; substrates; vapour phase epitaxial growth; InP; InP growth; InP precoated Si substrate; InP-Si; InP-Si₃N₄; Si; Si₃N₄ mask; asymmetric growth profile; crystallographic model; crystallographic quality improvement; epitaxial lateral overgrowth; gas phase supersaturation; low pressure hydride VPE system; selective area growth; vapor phase epitaxy system; Crystallography; Epitaxial growth; Epitaxial layers; Indium phosphide; Lattices; Plasma temperature; Scanning electron microscopy; Semiconductor films; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

ISSN

1092-8669

Print_ISBN

0-7803-7320-0

Type

conf

DOI

10.1109/ICIPRM.2002.1014410

Filename

1014410