DocumentCode
1888131
Title
Field emission properties from boron nitride nanotube field emitters
Author
Ki Nam Yun ; Dong Hoon Shin ; Leti, Guillaume ; Sang Heon Lee ; Cheol Jin Lee ; Yoon-Ho Song ; Luhua Li ; Ying Chen
Author_Institution
Sch. of Electr. Eng., Korea Univ., Seoul, South Korea
fYear
2015
fDate
13-17 July 2015
Firstpage
108
Lastpage
109
Abstract
Boron nitride nanotubes (BNNTs) have been studied as a field emission material due to their unique and excellent properties such as high oxidation resistance and negative electron affinity. However, field emission properties of BNNT field emitters were rarely reported until now because it is difficult to synthesize high purity BNNTs and fabricate stable BNNT field emitters. Here, we report high field emission properties from BNNT field emitters fabricated on a tungsten rod.
Keywords
boron compounds; electron field emission; nanotube devices; tungsten; BN; W; boron nitride nanotube field emitters; field emission material; field emission properties; high oxidation resistance; negative electron affinity; Boron; Carbon dioxide; Current density; Electric fields; Oxidation; Substrates; Tungsten; Boron nitride nanotubes; Field emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference (IVNC), 2015 28th International
Conference_Location
Guangzhou
Print_ISBN
978-1-4673-9356-0
Type
conf
DOI
10.1109/IVNC.2015.7225549
Filename
7225549
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