Absolute measurements of island temperature in a SOI-MOSFET by noise thermometry

The authors report the use of thermal noise thermometry on a relatively simple device structure to make a direct measurement of the silicon island temperature as a function of gate and drain bias. This technique has the advantage over other reported thermal measurement techniques in that it directly measures the silicon island temperature rather than the temperature of the polysilicon gate, thus yielding the first measurement of the true temperature rise. The experiment involved the use of a SOI (silicon-on-insulator) MOSFET with multiple body contacts along the length of the body. It is shown that the observed temperature rise resulted in a reduction of the drain current which was quantitatively due to the thermally induced fall in mobility