Fabrication of patterned boron-based nanowires and their field emission properties

Author

Tian, J.F. ; Li, C. ; Huang, Y. ; Tian, Y. ; Bao, L.H. ; Shen, C.M. ; Gao, H.-J.

Author_Institution

Beijing Nat. Lab. for Condensed Matter Phys., Inst. of Phys., Beijing, China

fYear

2015

fDate

13-17 July 2015

Firstpage

144

Lastpage

145

Abstract

The cold cathodes based on the one-dimensional nanoscale materials have exhibited excellent field emission (FE) properties in contrast with the traditional materials. The patterning of nanoscale cold cathodes can dramatically improve FE properties and increase FE enhancement factor by reducing screen effects between nanomaterials. Large-area patterned boron-based 1D nanostructure (B and B₄C NWs) have been synthesized using chemical vapor deposition (CVD). Field emission measurements of patterned B and B₄C NWs films show that their turn-on electric field are lower than that of continuous B and B₄C NWs films.

Keywords

boron compounds; cathodes; chemical vapour deposition; electron field emission; nanopatterning; nanowires; 1D nanoscale materials; B₄C; chemical vapor deposition; cold cathodes; field emission; patterned boron based nanowires; patterning; screen effects; Boron; Cathodes; Films; Iron; Nanomaterials; Nanoscale devices; Substrates; Boron-based Nanowires; Field emission properties; Patterned;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference (IVNC), 2015 28th International

Conference_Location

Guangzhou

Print_ISBN

978-1-4673-9356-0

Type

conf

DOI

10.1109/IVNC.2015.7225561

Filename

7225561