DocumentCode :
1888454
Title :
Fabrication of patterned boron-based nanowires and their field emission properties
Author :
Tian, J.F. ; Li, C. ; Huang, Y. ; Tian, Y. ; Bao, L.H. ; Shen, C.M. ; Gao, H.-J.
Author_Institution :
Beijing Nat. Lab. for Condensed Matter Phys., Inst. of Phys., Beijing, China
fYear :
2015
fDate :
13-17 July 2015
Firstpage :
144
Lastpage :
145
Abstract :
The cold cathodes based on the one-dimensional nanoscale materials have exhibited excellent field emission (FE) properties in contrast with the traditional materials. The patterning of nanoscale cold cathodes can dramatically improve FE properties and increase FE enhancement factor by reducing screen effects between nanomaterials. Large-area patterned boron-based 1D nanostructure (B and B4C NWs) have been synthesized using chemical vapor deposition (CVD). Field emission measurements of patterned B and B4C NWs films show that their turn-on electric field are lower than that of continuous B and B4C NWs films.
Keywords :
boron compounds; cathodes; chemical vapour deposition; electron field emission; nanopatterning; nanowires; 1D nanoscale materials; B4C; chemical vapor deposition; cold cathodes; field emission; patterned boron based nanowires; patterning; screen effects; Boron; Cathodes; Films; Iron; Nanomaterials; Nanoscale devices; Substrates; Boron-based Nanowires; Field emission properties; Patterned;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2015 28th International
Conference_Location :
Guangzhou
Print_ISBN :
978-1-4673-9356-0
Type :
conf
DOI :
10.1109/IVNC.2015.7225561
Filename :
7225561
Link To Document :
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