DocumentCode
1888481
Title
A precise-tracking NBTI-degradation monitor independent of NBTI recovery effect
Author
Saneyoshi, E. ; Nose, Keisuke ; Mizuno, M.
Author_Institution
NEC, Kawasaki, Japan
fYear
2010
fDate
7-11 Feb. 2010
Firstpage
192
Lastpage
193
Abstract
We design an on-chip aging monitor that combines the advantages of the small area of a ring-oscillator-type monitor and the short measurement time of a delay-line type monitor. It offers 1) short measurement time (more than 10x faster than conventional aging monitors, 2) small size (1/6 the size of a delay-line monitor), and 3) strong VDD noise immunity.
Keywords
delay lines; integrated circuit design; microprocessor chips; oscillators; NBTI degradation monitor; NBTI recovery effect; delay line type monitor; negative bias temperature instability; on-chip aging monitor; precise tracking; ring oscillator type monitor; short measurement time; Aging; Counting circuits; Degradation; Delay effects; Frequency measurement; Monitoring; Niobium compounds; Ring oscillators; Stress measurement; Titanium compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International
Conference_Location
San Francisco, CA
ISSN
0193-6530
Print_ISBN
978-1-4244-6033-5
Type
conf
DOI
10.1109/ISSCC.2010.5433994
Filename
5433994
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