DocumentCode :
1888481
Title :
A precise-tracking NBTI-degradation monitor independent of NBTI recovery effect
Author :
Saneyoshi, E. ; Nose, Keisuke ; Mizuno, M.
Author_Institution :
NEC, Kawasaki, Japan
fYear :
2010
fDate :
7-11 Feb. 2010
Firstpage :
192
Lastpage :
193
Abstract :
We design an on-chip aging monitor that combines the advantages of the small area of a ring-oscillator-type monitor and the short measurement time of a delay-line type monitor. It offers 1) short measurement time (more than 10x faster than conventional aging monitors, 2) small size (1/6 the size of a delay-line monitor), and 3) strong VDD noise immunity.
Keywords :
delay lines; integrated circuit design; microprocessor chips; oscillators; NBTI degradation monitor; NBTI recovery effect; delay line type monitor; negative bias temperature instability; on-chip aging monitor; precise tracking; ring oscillator type monitor; short measurement time; Aging; Counting circuits; Degradation; Delay effects; Frequency measurement; Monitoring; Niobium compounds; Ring oscillators; Stress measurement; Titanium compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0193-6530
Print_ISBN :
978-1-4244-6033-5
Type :
conf
DOI :
10.1109/ISSCC.2010.5433994
Filename :
5433994
Link To Document :
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