• DocumentCode
    1888496
  • Title

    Comparative study of field emission from individual ZnO nanowire with and without NH3 plasma treatment

  • Author

    Xiaomeng Song ; Long Zhao ; Zhipeng Zhang ; Guofu Zhang ; Juncong She ; Shaozhi Deng ; Ningsheng Xu ; Jun Chen

  • Author_Institution
    Sch. of Phys. & Eng., Sun Yat-sen Univ., Guangzhou, China
  • fYear
    2015
  • fDate
    13-17 July 2015
  • Firstpage
    150
  • Lastpage
    151
  • Abstract
    ZnO nanowires were treated with ammonia(NH3) plasma. Electrical and field emission properties of the same individual ZnO nanowire were investigated before and after NH3 plasma treatment. Lowered work function, increased resistance and lowered turn-on field was observed. Ammonia molecule substitutional defect on Zn site was attributed to the observed phenomena.
  • Keywords
    II-VI semiconductors; ammonia; field emission; nanowires; plasma materials processing; wide band gap semiconductors; work function; zinc compounds; NH3 plasma treatment; ZnO nanowires; ZnO-NH3; ammonia molecule substitutional defect; ammonia plasma treatment; field emission properties; turn-on field; work function; II-VI semiconductor materials; Oxidation; Plasmas; Resistance; Scanning electron microscopy; Surface treatment; Zinc oxide; Electrical characteristics; Field emission; ZnO nanowires; plasma treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Nanoelectronics Conference (IVNC), 2015 28th International
  • Conference_Location
    Guangzhou
  • Print_ISBN
    978-1-4673-9356-0
  • Type

    conf

  • DOI
    10.1109/IVNC.2015.7225563
  • Filename
    7225563
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1888496