DocumentCode
1888510
Title
ZnO nanowire field electron emitters
Author
Juncong She ; Tao Cao ; Shaozhi Deng ; Jun Chen ; Ningsheng Xu
Author_Institution
State Key Lab. of Optoelectron. Mater. & Technol., Sun Yat-sen Univ., Guangzhou, China
fYear
2015
fDate
13-17 July 2015
Firstpage
158
Lastpage
159
Abstract
This talk gives an overview on the precisely-controlled fabrication, optimization of the field electron emission performance, and the potential application of the zinc oxide nanoemitter arrays. The related nanofabrication methods, material and device physics are discussed.
Keywords
electron emission; field emitter arrays; nanofabrication; nanowires; wide band gap semiconductors; zinc compounds; ZnO; field electron emission optimization; nanofabrication methods; nanowire field electron emitters; precisely-controlled fabrication; zinc oxide nanoemitter arrays; Electric potential; Fabrication; II-VI semiconductor materials; Nanoscale devices; Nanostructures; Physics; Zinc oxide; Individual ZnO nanoemitters; actively-control electron emission; e-beam exposure; pulsed-laser illumination;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference (IVNC), 2015 28th International
Conference_Location
Guangzhou
Print_ISBN
978-1-4673-9356-0
Type
conf
DOI
10.1109/IVNC.2015.7225564
Filename
7225564
Link To Document