• DocumentCode
    1888515
  • Title

    Extremely wideband 0.18-μm CMOS compact distributed low-noise amplifier

  • Author

    Chirala, M. ; Guan, X. ; Huynh, C. ; Nguyen, C.

  • Author_Institution
    Z-Commun., Inc., San Jose, CA, USA
  • fYear
    2010
  • fDate
    11-17 July 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A distributed low-noise amplifier (LNA) employing novel transmission lines and inductors was designed in a standard 0.18-μm CMOS process. The new LNA provides significant improvement in performance and size with less than 13 dB return loss from DC to 17 GHz, average gain of 8 ± 0.2 dB from DC to 20 GHz, noise figure of 3.4-5 dB from 0.5-19 GHz, power consumption of 34.2 mW, and 1.05 × 0.37 mm2 chip size including RF pads.
  • Keywords
    CMOS analogue integrated circuits; MMIC amplifiers; distributed amplifiers; low noise amplifiers; transmission lines; LNA; extremely wideband CMOS compact distributed low noise amplifier; frequency 0 GHz to 20 GHz; gain 7.8 dB; gain 8.2 dB; inductors; noise figure 3.4 dB to 5 dB; power 34.2 mW; size 0.18 mum; transmission lines; CMOS integrated circuits; Distributed amplifiers; Gain; Inductors; Noise figure; Power transmission lines; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Antennas and Propagation Society International Symposium (APSURSI), 2010 IEEE
  • Conference_Location
    Toronto, ON
  • ISSN
    1522-3965
  • Print_ISBN
    978-1-4244-4967-5
  • Type

    conf

  • DOI
    10.1109/APS.2010.5561700
  • Filename
    5561700
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1888515