Title :
A ultra-wideband fully integrated CMOS sampling receiver frontend
Author :
Xu, R. ; Huynh, C. ; Nguyen, C.
Author_Institution :
Qualcomm Inc., San Diego, CA, USA
Abstract :
A new ultra-wideband 0.18-μm CMOS sampling receiver frontend was developed. It includes a low-noise amplifier (LNA) and a sampler and achieves high gain, fast sampling, low noise figure, low power consumption, and enhanced RF-power efficiency. The LNA and sample-and-hold capacitor are switched using two synchronized strobes generated on-chip. Measured results show performance of 9 to 12 dB voltage conversion gain, 16 to 25 dB noise figure, and power consumption of only 21.6 mW (with buffer) and 11.7 mW (without buffer) across DC to 3.5 GHz with 100-MHz sampling frequency.
Keywords :
CMOS integrated circuits; low noise amplifiers; low-power electronics; radio receivers; frequency 100 MHz; frequency 3.5 GHz; gain 9 dB to 12 dB; low-noise amplifier; noise figure 16 dB to 25 dB; power 11.7 mW; power 21.6 mW; sample-and-hold capacitor; size 0.18 mum; synchronized strobes; ultra-wideband CMOS sampling receiver frontend; ultra-wideband fully integrated CMOS sampling receiver frontend; Frequency measurement; Gain; Mixers; Pulse generation; Radio frequency; Receivers; Switches;
Conference_Titel :
Antennas and Propagation Society International Symposium (APSURSI), 2010 IEEE
Conference_Location :
Toronto, ON
Print_ISBN :
978-1-4244-4967-5
DOI :
10.1109/APS.2010.5561704
