Title :
Effect of plasma processing reactor circuitry on plasma characteristics
Author :
Rauf, S. ; Kushner, M.J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Abstract :
Summary form only given. It is well know that external circuitry greatly influences the performance of plasma processing reactors. Simulation of external circuits difficult since the time in which the external circuit attains the steady-state is several orders of magnitude longer than typical plasma simulation time scales. In this paper, we present a technique to simulate the external circuit concurrently with the plasma and implement it into the Hybrid Plasma Equipment Model (HPEM). The resulting model is used to investigate the influence of external circuitry on plasma behavior.
Keywords :
circuit analysis computing; impedance matching; nonlinear network analysis; plasma applications; plasma devices; plasma properties; plasma sheaths; plasma simulation; transformers; external circuitry; external circuits; hybrid plasma equipment model; plasma behavior; plasma characteristics; plasma processing reactor circuitry; plasma processing reactors; plasma simulation time scales; Circuit simulation; Computational modeling; Inductors; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma properties; Plasma simulation; Semiconductor device modeling; Sputter etching;
Conference_Titel :
Plasma Science, 1997. IEEE Conference Record - Abstracts., 1997 IEEE International Conference on
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-3990-8
DOI :
10.1109/PLASMA.1997.604960
