DocumentCode
1888676
Title
Effect of plasma processing reactor circuitry on plasma characteristics
Author
Rauf, S. ; Kushner, M.J.
Author_Institution
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fYear
1997
fDate
19-22 May 1997
Firstpage
234
Abstract
Summary form only given. It is well know that external circuitry greatly influences the performance of plasma processing reactors. Simulation of external circuits difficult since the time in which the external circuit attains the steady-state is several orders of magnitude longer than typical plasma simulation time scales. In this paper, we present a technique to simulate the external circuit concurrently with the plasma and implement it into the Hybrid Plasma Equipment Model (HPEM). The resulting model is used to investigate the influence of external circuitry on plasma behavior.
Keywords
circuit analysis computing; impedance matching; nonlinear network analysis; plasma applications; plasma devices; plasma properties; plasma sheaths; plasma simulation; transformers; external circuitry; external circuits; hybrid plasma equipment model; plasma behavior; plasma characteristics; plasma processing reactor circuitry; plasma processing reactors; plasma simulation time scales; Circuit simulation; Computational modeling; Inductors; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma properties; Plasma simulation; Semiconductor device modeling; Sputter etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Science, 1997. IEEE Conference Record - Abstracts., 1997 IEEE International Conference on
Conference_Location
San Diego, CA, USA
ISSN
0730-9244
Print_ISBN
0-7803-3990-8
Type
conf
DOI
10.1109/PLASMA.1997.604960
Filename
604960
Link To Document