Title :
Field emission properties of boron nanostructures
Author :
Fei Liu ; Haibo Gan ; Luxi Peng ; Yun Yang ; Jun Chen ; Shaozhi Deng ; Ningsheng Xu
Author_Institution :
State Key Lab. of Optoelectron. Mater. & Technol., Sun Yat-sen Univ., Guangzhou, China
Abstract :
Boron nanostructures (nanowires and nanotubes) have been thought as ideal nanomaterials for building optoelectronic nanodevices because of their high conductivity, large elastic modulus and high melting-point. In our studies, it is found that boron nanostructures have a low turn-on field and high emission uniformity. Moreover, boron nanostructures can endure a high emission current, which suggests that they may have potential application in field emission area.
Keywords :
boron; field emission; nanotubes; nanowires; B; boron nanostructures; conductivity; elastic modulus; emission current; emission uniformity; field emission properties; melting-point; nanotubes; nanowires; optoelectronic nanodevices; turn-on field; Boron; Conductivity; Electron tubes; Iron; Nanowires; Substrates; boron nanotube (BNT); boron nanowire (BNW); electron affinity; field emission (FE); high conductivity;
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2015 28th International
Conference_Location :
Guangzhou
Print_ISBN :
978-1-4673-9356-0
DOI :
10.1109/IVNC.2015.7225570
