DocumentCode
1888771
Title
Field emission properties of boron nanostructures
Author
Fei Liu ; Haibo Gan ; Luxi Peng ; Yun Yang ; Jun Chen ; Shaozhi Deng ; Ningsheng Xu
Author_Institution
State Key Lab. of Optoelectron. Mater. & Technol., Sun Yat-sen Univ., Guangzhou, China
fYear
2015
fDate
13-17 July 2015
Firstpage
174
Lastpage
175
Abstract
Boron nanostructures (nanowires and nanotubes) have been thought as ideal nanomaterials for building optoelectronic nanodevices because of their high conductivity, large elastic modulus and high melting-point. In our studies, it is found that boron nanostructures have a low turn-on field and high emission uniformity. Moreover, boron nanostructures can endure a high emission current, which suggests that they may have potential application in field emission area.
Keywords
boron; field emission; nanotubes; nanowires; B; boron nanostructures; conductivity; elastic modulus; emission current; emission uniformity; field emission properties; melting-point; nanotubes; nanowires; optoelectronic nanodevices; turn-on field; Boron; Conductivity; Electron tubes; Iron; Nanowires; Substrates; boron nanotube (BNT); boron nanowire (BNW); electron affinity; field emission (FE); high conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference (IVNC), 2015 28th International
Conference_Location
Guangzhou
Print_ISBN
978-1-4673-9356-0
Type
conf
DOI
10.1109/IVNC.2015.7225570
Filename
7225570
Link To Document