Long wavelength GaInNAs(Sb) lasers on GaAs

Author

Ha, Wonill ; Gambin, Vincent ; Bank, Seth ; Wistey, Mark ; Yuen, Homan ; Kim, Seongsin ; Harris, James S., Jr.

Author_Institution

Solid State & Photonics Lab., Stanford Univ., CA, USA

fYear

2002

fDate

2002

Firstpage

381

Lastpage

384

Abstract

Presents new techniques for developing long wavelength post-annealed GaInNAs(Sb) materials grown by solid source MBE (SSMBE) with a RF plasma nitrogen source. Rather than utilizing conventional GaAs barriers between GaInNAs quantum wells (QWs), we have grown GaNAs barriers. This design reduces the blue-shift of the emission spectrum due to decreased nitrogen out-diffusion. Moreover, the decreased carrier confinement of GaNAs further supports longer emission wavelength compared to GaAs barrier. Additional benefit of GaNAs barriers is a reduction in the overall compressive strain of the active region because GaNAs is under tensile-strain.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; quantum well lasers; semiconductor epitaxial layers; semiconductor growth; GaInNAs(Sb); GaInNAs(Sb)-GaAs; RF plasma nitrogen source; active region; carrier confinement; emission spectrum blue-shift; emission wavelength; long wavelength post-annealed materials; overall compressive strain; quantum wells; solid source MBE; Gallium arsenide; Nitrogen; Optical materials; Plasma confinement; Plasma materials processing; Plasma sources; Plasma waves; Quantum well lasers; Radio frequency; Solids;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

ISSN

1092-8669

Print_ISBN

0-7803-7320-0

Type

conf

DOI

10.1109/ICIPRM.2002.1014447

Filename

1014447