DocumentCode
1888842
Title
Ultrafast photocathodes based on n-doped graphene emitters on compound semiconductor photoswitches
Author
Yilmazoglu, O. ; Al-Daffaie, S. ; Kuppers, F. ; Hartnagel, H.L. ; Neo, Y. ; Mimura, H.
Author_Institution
Electr. Eng. & Inf. Technol., Tech. Univ. Darmstadt, Darmstadt, Germany
fYear
2015
fDate
13-17 July 2015
Firstpage
180
Lastpage
181
Abstract
A photocathode based on n-doped graphene emitters in series to a GaAs photoswitch was fabricated and used for pulsed field electron emission. The n-doped graphene array emits at low turn-on fields (<; 3 V/μm). A fast photomodulation of the emission current with high on/off ratio ~200 was achieved with a semi-insulating (s.i.) GaAs photoswitch in a diode configuration. Different laser sources were used for these investigations.
Keywords
III-V semiconductors; electron field emission; gallium arsenide; graphene devices; photocathodes; photoelectric devices; C; GaAs; compound semiconductor photoswitches; diode configuration; fast photomodulation; n-doped graphene emitter; pulsed field electron emission; ultrafast photocathodes; Cathodes; Current measurement; Gallium arsenide; Graphene; Optical resonators; Semiconductor device measurement; field emitter; n-doped graphene; photocathode; semi-insulating GaAs;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference (IVNC), 2015 28th International
Conference_Location
Guangzhou
Print_ISBN
978-1-4673-9356-0
Type
conf
DOI
10.1109/IVNC.2015.7225573
Filename
7225573
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