Title :
GaAs-based GaAsNSe/GaAs superlattices emitting at 1.5 /spl mu/m-wavelength region
Author :
Uesugi, Katsuhiro ; Suemune, Ikuo
Author_Institution :
Res. Inst. for Electron. Sci., Hokkaido Univ., Sapporo, Japan
Abstract :
GaAsNSe/GaAs superlattices (SLs) were grown on GaAs(001) substrates by metalorganic molecular beam epitaxy (MOMBE). Strong photoluminessence (PL) emission with wide luminescence line at 1.5 μm-wavelength region was observed. It was found that nonradiative recombination in GaAsNSe layers was suppressed by heavy Se doping. GaAsNSe alloy is expected to be a new material for the 1.5 μm-wavelength devices of the GaAs based ststem.
Keywords :
III-V semiconductors; gallium arsenide; molecular beam epitaxial growth; optical transmitters; photoluminescence; semiconductor superlattices; superluminescent diodes; 1.5 micron; GaAsNSe-GaAs; GaAsNSe/GaAs; MOMBE; metalorganic molecular beam epitaxy; nonradiative recombination; optical-fiber networks; photoluminescence; superlattices; superluminescent diodes; wide luminescence line; Conducting materials; Doping; Gallium arsenide; Laser sintering; Lead; Luminescence; Photonic band gap; Superlattices; Temperature dependence; X-ray scattering;
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
Conference_Location :
Stockholm, Sweden
Print_ISBN :
0-7803-7320-0
DOI :
10.1109/ICIPRM.2002.1014448
