High In content GaInAsN on InP: composition dependent band gap energy and luminescence properties

Quaternary pseudomorphically strained Ga_1-xIn_xAs_1-yN_y films and double quantum wells (0.53 ≤ x ≤ 0.70, 0 ≤ y ≤ 0.024) were grown by plasma assisted molecular beam epitaxy on InP substrates. A reduction of compressive strain and a low-energy shift of photoluminescence (PL) peak position was observed with increasing N concentration. The deterioration of the PL properties in terms of reduced peak intensity and increased linewidth with increasing N incorporation can be partially compensated by rapid thermal annealing, which is accompanied by a blue-shift with respect to the as-grown samples. From the measured PL peak energies of the as-grown samples the net effect of N incorporation on the GaInAsN bandgap energy was deduced. The band anticrossing model was fitted to the obtained composition dependent GaInAsN bandgap energy resulting in values for the interaction parameter C_MN for high In content GaInAsN which are only slightly smaller than that reported for low In content GaInAsN on GaAs.