Title :
Growth of InP and GaAs substrate crystals by the vertical gradient freeze method
Author :
Grant, I.R. ; Sahr, U.
Author_Institution :
Wafer Technol. Ltd., Milton Keynes, UK
Abstract :
VGF crystal growth is rapidly gaining ground as a manufacturing method for both GaAs and InP. Its position in GaAs is well established and it is expected to grow further in importance with increased uptake of epitaxial processing for microwave electronics. Utilisation in InP is, so far, less widespread, with greater challenges in single crystal yield. The general trend towards larger substrate diameters provides further opportunities to take advantage of the lower crystal defect density offered by the technique.
Keywords :
III-V semiconductors; crystal growth from melt; dislocation density; gallium arsenide; indium compounds; GaAs; InP; crystal defect density; crystal growth from melt; epitaxial processing; manufacturing method; microwave electronics; single crystal yield; substrate diameters; vertical gradient freeze method; Consumer electronics; Crystalline materials; Crystallization; Crystals; Epitaxial growth; Gallium arsenide; Indium phosphide; Manufacturing; Materials science and technology; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
Print_ISBN :
0-7803-7320-0
DOI :
10.1109/ICIPRM.2002.1014455
