DocumentCode :
1889045
Title :
Terahertz quantum cascade laser based on GaSb/AlGaSb material system
Author :
Hosako, Iwao ; Yasuda, Hiroaki
Author_Institution :
Nat. Inst. of Inf. & Commun. Technol., Tokyo
fYear :
2007
fDate :
24-26 Sept. 2007
Firstpage :
1
Lastpage :
3
Abstract :
Terahertz quantum cascade laser using a resonant longitudinal-optical phonon depopulation scheme based on GaSb/AlGaSb material system on GaAs substrate has been proposed and studied. A smaller threshold electric field is expected for GaSb/AlGaSb QCL because GaSb has smaller longitudinal-optical phonon energy than that of GaAs. Although, there exists a large lattice mismatch between GaAs and GaSb, it was successfully demonstrated that the THz-QCL structures of GaSb/AlGaSb active layers on GaAs substrate were fabricated.
Keywords :
III-V semiconductors; aluminium compounds; electric fields; gallium compounds; phonons; quantum cascade lasers; submillimetre wave lasers; GaSb-AlGaSb; longitudinal-optical phonon energy; resonant longitudinal-optical phonon depopulation scheme; terahertz quantum cascade laser; threshold electric field; Conducting materials; Gallium arsenide; Gas lasers; Lattices; Optical device fabrication; Optical materials; Optical scattering; Phonons; Quantum cascade lasers; Resonance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applied Electromagnetics and Communications, 2007. ICECom 2007. 19th International Conference on
Conference_Location :
Dubrovnik
Print_ISBN :
978-953-6037-50-6
Electronic_ISBN :
978-953-6037-51-3
Type :
conf
DOI :
10.1109/ICECOM.2007.4544437
Filename :
4544437
Link To Document :
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