DocumentCode
1889067
Title
A wafer-level heterogeneous technology integration for flexible pseudo-SoC
Author
Yamada, Hiroyoshi ; Onozuka, Y. ; Iida, A. ; Itaya, Kazuhiko ; Funaki, Hideyuki
Author_Institution
Toshiba, Kawasaki, Japan
fYear
2010
fDate
7-11 Feb. 2010
Firstpage
146
Lastpage
147
Abstract
A flexible pseudo-SoC incorporating electrostatic MEMS grating light valves and 40 V high-speed pulse-width modulator (PWM) driver CMOS chip is developed to demonstrate wafer-level heterogeneous technology integration. The pseudo-SoC forms a global layer (line/space = 1 ¿m/1 ¿m) on the MEMS and CMOS chips, which are both embedded in epoxy resin, with a total thickness of 100 ¿m.
Keywords
CMOS integrated circuits; driver circuits; flexible electronics; micromechanical devices; pulse width modulation; system-on-chip; wafer-scale integration; CMOS chip; electrostatic MEMS grating light valves; epoxy resin; flexible pseudoSoC; global layer; high-speed pulse-width modulator driver; voltage 40 V; wafer level heterogeneous technology integration; CMOS technology; Electrostatics; Epoxy resins; Gratings; Micromechanical devices; Optical modulation; Pulse width modulation; Space technology; Space vector pulse width modulation; Valves;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International
Conference_Location
San Francisco, CA
ISSN
0193-6530
Print_ISBN
978-1-4244-6033-5
Type
conf
DOI
10.1109/ISSCC.2010.5434011
Filename
5434011
Link To Document