Title :
Statistical parametric study of non-parallel inductive reactors
Author :
Keiter, E.R. ; Kushner, M.J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Abstract :
Summary form only given. Parametrization of new plasma processing is a very time consuming process. By combining statistical techniques with computer simulation, one can construct a "numerical design of experiment" (NDOE), which minimizes the time required for the investigation. We present the results of such an NDOE, applied to a generic non-parallel inductively coupled reactor, as there has recently been interest in inductive reactors with a dome shaped quartz top. We use a statistical design of experiment software too, Echip(C), to construct the experiment and then perform the experiment with the Hybrid Plasma Equipment Model (HPEM). Echip(C) is also used in the post-experiment analysis. The goal is to determine functional relationships between ion and neutral flux uniformity to the wafer and geometrical parameters such as focus ring height, reactor height, and reactor radius. Additionally, we consider several non-geometrical variables such as substrate bias and pressure. By combining numerical modeling with statistics software we have been able to determine optimal parameters sets for different gas systems.
Keywords :
plasma applications; plasma devices; plasma simulation; statistical analysis; Echip(C); Hybrid Plasma Equipment Model; computer simulation; dome shaped quartz top; experiment software; focus ring height; functional relationships; gas systems; generic nonparallel inductively coupled reactor; ion flux uniformity; neutral flux uniformity; nonparallel inductive reactors; numerical design of experiment; numerical modeling; optimal parameters; parametrization; plasma processing; post-experiment analysis; statistical design; statistical parametric study; statistical techniques; statistics software; substrate bias; Computer simulation; Inductors; Numerical models; Parametric study; Plasma materials processing; Plasma simulation; Semiconductor device modeling; Software design; Software performance; Statistics;
Conference_Titel :
Plasma Science, 1997. IEEE Conference Record - Abstracts., 1997 IEEE International Conference on
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-3990-8
DOI :
10.1109/PLASMA.1997.604962