Gunn diode as a noise generator

It is shown that in case with uniformly doped GD base there is no way of developing high-field domain. Instead of this negative-charged accumulation layer appears and moves from cathode to anode. Simultaneously appears an excess of electrons in anode region of the high-field. Spontaneous excitation and relaxation of electrons in this region probably leads to white noise generation within quite wide frequency band. It is shown that arising of classical high-field domain requires nonuniformly doped base of GD.