Title :
Design of millimeter IMPATT diodes with concentric ring geometry of active structures in pulsed mode
Author :
Tashilov, A.S. ; Dyshekov, A.A. ; Khapachev, Y.P. ; Bagov, A.N.
Author_Institution :
Kabardino-Balkarian State Univ. Of Nalchik, Nalchik, Russia
Abstract :
For the pulse millimeter IMPATT diodes a new configuration of active structures as an array of concentric ring mesa structures is proposed. Numerical evaluation of pulsed thermal spreading resistance IMPATT 8-mm range on the basis of such arrays with the width of the ring 4 μm pulse duration nutrition 100 and 300 ns is carried out. A possibility of a significant reduction in the proposed configuration of the active structure in comparison with the standard one mesa design with an equal area of the p-n junction is studied.
Keywords :
IMPATT diodes; millimetre wave diodes; p-n junctions; concentric ring geometry; concentric ring mesa structures; impact avalanche transit-time diodes; p-n junction; pulse millimeter IMPATT diodes; pulsed mode; pulsed thermal spreading resistance; size 4 mum; size 8 mm; time 100 ns to 300 ns; Arrays; Copper; Heat sinks; P-n junctions; Structural rings; Thermal resistance;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-1-4673-1199-1
