Title :
Time dependence of fully-depleted SOI MOSFETs subthreshold current
Author :
Eraghi, E. Assad ; Chen, J. ; Solomon, R. ; Chan, Thomas ; Ko, P. ; Hu, C.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
It is shown that the subthreshold current and the threshold voltage of fully-depleted SOI (silicon-on-insulator) MOSFETs show a time-dependent behavior under certain front-gate and back-gate voltage conditions. An explanation for this behavior is provided. The SOI devices used in the study were MOSFETs on SIMOX (separation by implanted oxygen) wafers. The gate oxide thickness, silicon film thickness, and buried oxide thickness were approximately 118 Å, 700 Å, and 4000 Å respectively. The doping concentration was 2×1017 cm-3
Keywords :
insulated gate field effect transistors; semiconductor device testing; semiconductor-insulator boundaries; SIMOX wafers; back-gate voltage conditions; buried oxide thickness; doping concentration; film thickness; front gate voltage conditions; fully depleted SOI MOSFET; gate oxide thickness; subthreshold current; threshold voltage; time-dependent behavior; Capacitance; Doping; MOS devices; MOSFETs; Semiconductor films; Silicon; Steady-state; Subthreshold current; Threshold voltage; Time measurement;
Conference_Titel :
SOI Conference, 1991. Proceedings, 1991., IEEE International
Conference_Location :
Vail Valley, CO
Print_ISBN :
0-7803-0184-6
DOI :
10.1109/SOI.1991.162842
