Title :
Researches on vertical vacuum channel nano-gaps
Author :
Xinghui Li ; Guodong Bai ; Hanyan Li ; Mingqing Ding ; Jinjun Feng ; Fujiang Liao
Author_Institution :
Nat. Key Lab. of Sci. & Technol. on Vacuum Electron., Beijing Vacuum Electron. Res. Inst., Beijing, China
Abstract :
Metal-oxide-metal vertical vacuum channel nanogaps were fabricated using standard lithography and etching processing. Field emission characteristics of the nano-gaps were investigated and the corresponding ampere-voltage plots were obtained. Electron emission failures analysis was also made in testing. The goal of the research aims to low-power and high-speed vacuum nano-channel transistors and vacuum integrated circuits.
Keywords :
electron field emission; etching; integrated circuits; lithography; low-power electronics; transistors; vacuum microelectronics; ampere-voltage plots; electron emission failures analysis; etching process; field emission characteristics; lithography process; metal-oxide-metal nanogaps; vacuum integrated circuit; vacuum nanochannel transistor; vertical vacuum channel nanogaps; Electric fields; Electrodes; Etching; Lithography; Nanoscale devices; Transistors; Vacuum technology; field emission; micro/nanofabrication; nanogap; thin film; vacuum channel transistor; vacuum integrated circuit;
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2015 28th International
Conference_Location :
Guangzhou
Print_ISBN :
978-1-4673-9356-0
DOI :
10.1109/IVNC.2015.7225587
