An integrated CoolMOS FET/SiC diode module for high performance power switching

A Si CoolMOS FET and SiC diode assembly with gate driver in boost configuration (ratings at 600 V/12 A), for power factor correction (PFC) application, has been fabricated in a version of IPEM - integrated power electronics module. It uses technology of so-called embedded power (EP), to form a three-dimensional (3-D) multiple chips/components interconnection with the capability of functional integration and high performance. An integrated power chip stage is built by embedding chips in a co-planar ceramic substrate and building up onto it a metallization thin-film interconnection. This deposited metallization not only bonds the power chips, but also provides the second-level interconnect wiring, so that associated components and base substrate are mounted from top and bottom sides. In this paper, the switching parameters of this module and their effects on a converter´s performance have been experimentally characterized. The procedures adopted for the defined fabrication processes of planar metallization interconnecting and solder stacking, are presented. In addition to the improvement of structural electrical properties, compared to a conventional discrete version, the characteristics of the planar process integration have also been demonstrated.