DocumentCode
1889285
Title
III-V nitride electronics
Author
Pavlidis, Dimitris
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fYear
2002
fDate
2002
Firstpage
443
Lastpage
446
Abstract
The properties and performance of III-V nitride electronic devices are reviewed. These include AlGaN/GaN and AlN/GaN HEMTs, as well as, two-terminal Gunn devices. The high frequency, power, noise characteristics and performance limitations such as dispersion are addressed.
Keywords
Gunn devices; III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device noise; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN; AlN-GaN; AlN/GaN; HEMTs; III-V nitride electronics; dispersion; high-frequency characteristics; noise characteristics; power; two-terminal Gunn devices; Aluminum gallium nitride; Frequency dependence; Gallium arsenide; Gallium nitride; HEMTs; III-V semiconductor materials; MMICs; Power measurement; Scalability; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
ISSN
1092-8669
Print_ISBN
0-7803-7320-0
Type
conf
DOI
10.1109/ICIPRM.2002.1014463
Filename
1014463
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