InP HEMT-based, cryogenic, wideband LNAs for 4-8 GHz operating at very low DC-power

Author

Mellberg, A. ; Wadefalk, N. ; Rorsman, N. ; Choumas, E. ; Stenarson, J. ; Angelov, I. ; Starski, P. ; Kollberg, E. ; Grahn, J. ; Zirath, H.

Author_Institution

Dept. of Microelectron., Chalmers Univ. of Technol., Gothenburg, Sweden

fYear

2002

fDate

2002

Firstpage

459

Lastpage

462

Abstract

We present cryogenic broadband amplifiers for 4-8 GHz with very low dc-power consumption and low noise. Two different amplifiers were designed and manufactured, one of which was based on in-house InP devices and the other on commercial GaAs devices. When cooled to 15 K, the InP-based amplifier shows an input noise temperature of 3.9 K at a dc-power consumption of 3.7 mW. The GaAs-based amplifier shows an input noise temperature of 6.5 K at a dc-power consumption of 23 mW.

Keywords

III-V semiconductors; cryogenic electronics; high electron mobility transistors; indium compounds; low-power electronics; microwave amplifiers; wideband amplifiers; 15 K; 23 mW; 3.7 mW; 4 to 8 GHz; DC power consumption; GaAs; GaAs HEMT; InP; InP HEMT; cryogenic broadband low-noise amplifier; input noise temperature; low power operation; Broadband amplifiers; Cryogenics; Electrodes; HEMTs; Indium gallium arsenide; Indium phosphide; MODFETs; Semiconductor device noise; Temperature; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

ISSN

1092-8669

Print_ISBN

0-7803-7320-0

Type

conf

DOI

10.1109/ICIPRM.2002.1014467

Filename

1014467