Premature breakdown in non-fully depleted SOI/MOSFETs with body-tied-to-source structure

Author

Hwang, J.M. ; Lu, H. ; Sheu, Y.D. ; Bailey, W. ; Mei, P. ; Pollack, G.

Author_Institution

Texas Instruments Inc., Dallas, TX, USA

fYear

1991

fDate

1-3 Oct 1991

Firstpage

34

Lastpage

35

Abstract

The authors discuss the bipolar-induced breakdown in n-channel SOI (silicon-on-insulator) MOSFETs with BTS (body-tied-to-source) straps in terms of important device parameters of body resistance, bipolar gain, and impact ionization. It is concluded that the breakdown in BTS transistors can be explained by the bipolar effects associated with impact ionization and can be improved by controlling these three parameters, depending on specific need. The breakdown curve shape is found to depend on bipolar current-gain characteristics

Keywords

impact ionisation; insulated gate field effect transistors; semiconductor-insulator boundaries; bipolar current-gain characteristics; bipolar-induced breakdown; body resistance; body-tied-to-source structure; breakdown curve shape; impact ionization; nonfully depleted SOI MOSFET; premature breakdown; Breakdown voltage; Electric breakdown; Electrical capacitance tomography; Immune system; Impact ionization; Instruments; MOSFETs; Process design; Shape; Silicidation;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1991. Proceedings, 1991., IEEE International

Conference_Location

Vail Valley, CO

Print_ISBN

0-7803-0184-6

Type

conf

DOI

10.1109/SOI.1991.162843

Filename

162843