Title :
Nonlinear EE_HEMT model of GaN transistor
Author :
Krutov, A.V. ; Rebrov, A.S.
Author_Institution :
FSUE RPC Istok, Fryazino, Russia
Abstract :
The present paper concerns the results of creating a nonlinear EE_HEMT model of TGF2023-01 transistor. The results of large signal matching simulation, comparison modeling results and Triquint data are presented.
Keywords :
gallium compounds; high electron mobility transistors; GaN; GaN transistor; TGF2023-01 transistor; Triquint data; nonlinear EE_HEMT model; signal matching simulation; Data models; Electronic mail; Gain; Gallium arsenide; Gallium nitride; PHEMTs;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-1-4673-1199-1
