Title :
Impedance spectroscopy of semiconductor heterojunctions
Author_Institution :
Frantsevich Inst. for Problems of Mater. Sci., Chernivtsi, Ukraine
Abstract :
The quantitative analysis of the impedance of nonideal heterojunctions was carried out taking into consideration the effects of series resistance, shunt resistance, parasitic inductance and electrically active interface traps. A new approach is proposed to determine the energy distribution of surface state density and to calculate the actual value of barrier capacitance of heterojunctions on the basis of the analysis of their complex impedance-voltage characteristics.
Keywords :
interface states; semiconductor heterojunctions; spectroscopy; surface states; barrier capacitance; complex impedance-voltage characteristics; electrically active interface traps; energy distribution; impedance spectroscopy; nonideal heterojunctions; parasitic inductance; semiconductor heterojunctions; series resistance effect; shunt resistance; surface state density; Capacitance; Equivalent circuits; Heterojunctions; Impedance; Impedance measurement; Resistance; Semiconductor device measurement;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-1-4673-1199-1
