All-active InGaAsP/InP ring cavities for widespread functionalities in the wavelength domain

Author

Troppenz, U. ; Hamacher, M. ; Rabus, D.G. ; Heidrich, H.

Author_Institution

Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH, Germany

fYear

2002

fDate

2002

Firstpage

475

Lastpage

478

Abstract

All-active ring resonator structures allow filter operation as well as laser mode operation, only depending on the driving conditions. Add/drop filter devices based on active InGaAsP/InP have been realized for the 100 and 50 GHz free spectral range. The properties of all pass-filter elements built of active single ring resonators are investigated. A delay time up to 80 ps has been measured for a bending radius R of 250 μm and a coupling ratio of 0.6 to the bus-waveguide. The respective dispersion of ±280 ps/nm is attained within a pass band of 5 GHz. Operating in the laser mode, microring resonator structures with R = 50 μm show a single mode emission spectrum with an optical power output as high as of 6.5 mW per facet.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; optical communication equipment; optical delay lines; optical filters; optical resonators; ring lasers; semiconductor lasers; 100 GHz; 250 micron; 5 GHz; 50 GHz; 50 micron; 6.5 mW; 80 ps; InGaAsP/InP ring cavities; add/drop filter devices; adjustable wavelength filters; all pass-filter elements; all-active ring resonator structures; driving conditions; filter operation; laser mode operation; microring resonator structures; optical delay lines; single mode emission spectrum; Delay effects; Indium phosphide; Laser modes; Optical resonators; Optical ring resonators; Power lasers; Resonator filters; Ring lasers; Stimulated emission; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

ISSN

1092-8669

Print_ISBN

0-7803-7320-0

Type

conf

DOI

10.1109/ICIPRM.2002.1014471

Filename

1014471