Optical absorption by dislocations in strongly mismatched InP and GaAs on silicon

Author

Peiner, Erwin

Author_Institution

Inst. fur Halbleitertechnik, Technische Univ. Braunschweig, Germany

fYear

2002

fDate

2002

Firstpage

483

Lastpage

486

Abstract

The effect of dislocations on optical absorption in thin InP and GaAs epitaxial layers on silicon was investigated. Modeling was performed based on the electric field generated by charged states at the dislocation core. The feasibility of optical spectroscopy was demonstrated for characterizing the quality of InP and GaAs layers fabricated by strongly mismatched heteroepitaxy on silicon.

Keywords

III-V semiconductors; dislocation density; ellipsometry; gallium arsenide; indium compounds; integrated optoelectronics; light absorption; semiconductor epitaxial layers; visible spectroscopy; GaAs-Si; InP-Si; Si; charged states; dislocation density determination; dislocations; electric field; optical absorption; optical spectroscopy; optoelectronic transmitter; physical model; spectroscopic ellipsometry; strongly mismatched heteroepitaxy; thin GaAs epitaxial layers; thin InP epitaxial layers; Absorption; Epitaxial growth; Gallium arsenide; Indium phosphide; Optical receivers; Optical refraction; Optical saturation; Optical transmitters; Silicon; Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

ISSN

1092-8669

Print_ISBN

0-7803-7320-0

Type

conf

DOI

10.1109/ICIPRM.2002.1014473

Filename

1014473