Title :
Influence of Si-donor doping on the exciton localization in modulation-doped GaN/Al0.07Ga0.93N multiple quantum well
Author :
Haratizadeh, H. ; Paskov, P.P. ; Pozina, G. ; Holtz, P.O. ; Monemar, B.
Author_Institution :
Dept. of Phys. & Meas. Technol., Linkoping Univ.
Abstract :
We have studied the effects of Si doping on the recombination dynamics and exciton localization in modulation-doped GaN/Al0.07Ga0.93N multiple-quantum-well structures by means of photoluminescence (PL) and time-resolved PL measurements. The PL peak position shows a blue shift as the Si doping in the barriers is increased (up to 4.2×1019 cm-3). For even higher doping levels a red shift of the PL emission is observed. The decay time of an undoped sample shows nonexponential behavior, while the Si doped samples show mono-exponential behavior. Surprisingly, the PL decay time at 2 K is found to be nearly constant for all doping levels, in these samples.
Keywords :
III-V semiconductors; aluminium compounds; excitons; gallium compounds; photoluminescence; semiconductor doping; semiconductor quantum wells; silicon; spectral line shift; time resolved spectra; 2 K; GaN-Al0.07Ga0.93N:Si; PL decay time; PL peak position; Si-donor doping; blue shift; doping levels; exciton localization; modulation-doped GaN/Al0.07Ga0.93N multiple quantum well; mono-exponential behavior; nonexponential behavior; photoluminescence; recombination dynamics; red shift; time-resolved PL; Electric variables measurement; Epitaxial layers; Excitons; Gallium nitride; Optical polarization; Piezoelectric polarization; Quantum well devices; Radiative recombination; Semiconductor device doping; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
Print_ISBN :
0-7803-7320-0
DOI :
10.1109/ICIPRM.2002.1014476
