• DocumentCode
    1889673
  • Title

    Resonance frequency of Gunn diodes based on А3В5 graded-gap semiconductors

  • Author

    Zhivotova, E.N. ; Storozhenko, I.P.

  • Author_Institution
    Nat. Pharm. Univ., Kharkov, Ukraine
  • fYear
    2012
  • fDate
    10-14 Sept. 2012
  • Firstpage
    165
  • Lastpage
    166
  • Abstract
    Dependence of resonance frequency of current oscillations generated by Gunn diodes (TED) on the basis of graded gap semiconductors on length of the graded gap layer (lV), active region length (la) and the voltage (U) applied to the diode is determined. The studies have been carried out using three-level model of intervalley electron transfer (IET) in the graded gap semiconductor.
  • Keywords
    Gunn diodes; semiconductor device models; A3B5 graded-gap semiconductors; Gunn diodes; IET; TED; active region length; graded gap layer; intervalley electron transfer; resonance frequency; three-level model; Electronic mail; Gallium arsenide; Gallium nitride; Resonant frequency; Semiconductor diodes; Tuning;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
  • Conference_Location
    Sevastopol, Crimea
  • Print_ISBN
    978-1-4673-1199-1
  • Type

    conf

  • Filename
    6335930
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1889673